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You are here: Home » Products » The DC sputtering SiC target silicon carbide Ion Beam Sputtering
The DC sputtering SiC target silicon carbide Ion Beam Sputtering
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Product: Views:182The DC sputtering SiC target silicon carbide Ion Beam Sputtering 
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Last updated: 2017-12-04 04:15
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SiC target 99.5% Physical properties Color Black Density 3.22g/ml Melting point 2730 Technical indicators purity 99.5% Relative density >99% Cut surface flatness 3.2Ra Tolerance ±0.1mm grain size uniform Material SiC Brand MAT-CN Origin Nanchang Jiangxi Specifications Size 01: diameter <360mm thickness> 1 mm (wafer / round table / rod) Size 02: length <300mm width <300mm thickness> 1mm rectangular / sheet / step-like (splicing) Size 03: outer diameter <360mm inner diameter> 1mm wall degree> 1 mm length> 1 mm (pipe / ring / rotatable targets) Size 04 :: be customized according to user needs, sample processing, to map processing Minimum order quantity 1, large concessions Supply capacity the same batch, the same material, continuous and reliable supply; 100 kg / month min Delivery time a single sheet of material 1 week delivery, bulk material 20 days -30 days delivery(working days) Production process vacuum levitation melting, casting into ingots, thermo-mechanical treatment and precision machining
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